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- W2072398049 abstract "The dependence of PR spectra parameters on free carrier concentration (ne) measured by CV in the range from 2 × 1014 to 2 × 1018cm−3 of VPE-grown GaAs epitaxial layers is investigated in detail. Linear dependences on ne of Ω3 (Ω optoelectric energy, ne from 1014 to 5 × 1017 cm−3), of the shift of the first positive peak position in the PR spectrum at the E0 c.p. (ne from 1.5 × 1017 to 7.5 × 1017 cm−3), and of the C parameter, which considers the amplitude and the broadening parameter of PR spectra at the E1 c.p.(ne from 2 × 1015 to 7.5 × 1017 cm−3), allow an easy calibration of this method to CV measurements. Correlation parameters are found as Ω3/nc = (1.7 ± 0.3) × 10−13 meV3 cm3, δE1P/ δne = (11.6 ± 0.4) × 10−20eVcm3, and C/ne = (1.4 ± 0.1) × 10−15 meV3cm3, respectively. Die Abhängigkeit von PR-Spektrenpärametern von der Konzentration. der freien Ladungsträger (ne, ermittelt mit CV, in der Größenordnung von 2 × 1014 bis 2×1018cm−3 in mit VPE hergestellten GaAs-Epitaxieschichten wird detailiert untersucht. Lineare Abhängigkeiten der Größen Ω3 (Ω optoelektrische Energie, ne von 1014 bis 5 × 1017 cm−3), der Verschiebung des ersten positiven Peaks im PR-Spektrum am E0 übergang (ne von 1.5 × 1017 bis 7.5 × 1017cm−3) und C, welches sowohl die Amplitude als auch die Spektrenverbreiterung am E1-übergang beinhaltet, von ne erlauben eine einfache Kalibrierung dieser Methode mit Hilfe von CV-Messungen. Als Korrelationsparameter werden entsprechendgefunden: Ω3/ne = (1, 7 ± 0, 3) × 10 13 meV3 cm3, δE1P/δne = (11, 6 ±, 0, 4)× 10−20 eV cm3 und C/ne = (1,4 ± 0,1) × 10−15 meV3cm3." @default.
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- W2072398049 date "1990-06-16" @default.
- W2072398049 modified "2023-09-25" @default.
- W2072398049 title "Correlation Between Photoreflectance and CV Measurements of n-GaAs Epitaxial Layers" @default.
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- W2072398049 doi "https://doi.org/10.1002/pssa.2211190210" @default.
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