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• W2072401552 abstract "Thin hydrogenated amorphous silicon (a-Si:H) films were deposited on as-cleaved and sputter-roughed surfaces of highly oriented pyrolytic graphite (HOPG) from disilane by hydrogen-radical-assisted chemical-vapor deposition, which utilized a filament-assisted thermal decomposition of hydrogen. The initial stages of film growth were studied by x-ray photoelectron spectroscopy (XPS). The XPS data taken for films deposited on the cleaved HOPG surface exhibited such features correlative with a layer-by-layer type of growth. The corresponding film structures, as inferred from the hydrogen-induced Si 2p binding-energy shift and the resistivity against aerial oxidation, are such that even submonolayer films deposited at room temperature can achieve a highly cross-linked amorphous network in which the monohydride configurations predominate. Construction of an extended amorphous network was strongly disturbed on the sputter-roughed HOPG surface for films less than a few atomic layers. The corresponding initial-stage film structures thus present good contrast to those on the cleaved surface. Si2H5 radicals are likely species to contribute to the unique low-temperature growth of a-Si:H from disilane." @default.
• W2072401552 created "2016-06-24" @default.
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• W2072401552 date "1994-04-01" @default.
• W2072401552 modified "2023-09-24" @default.
• W2072401552 title "Characterization of the initial stages of hydrogen‐radical‐assisted chemical‐vapor deposition of amorphous silicon from disilane on cleaved and sputter‐roughed graphite surfaces" @default.
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• W2072401552 doi "https://doi.org/10.1063/1.356106" @default.
• W2072401552 hasPublicationYear "1994" @default.
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