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- W2072465856 abstract "A scanning system for mapping defects, and for measuring their influence on the photovoltaic of Si solar cells, is described. The system uses optical scattering patterns to identify the nature of defects. The local density of the defects is statistically determined from the integrated scattered light. The optical system can also measure the reflectance and the light-induced current which is then used to yield maps of the internal photoresponse of the device." @default.
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- W2072465856 date "2000-03-01" @default.
- W2072465856 modified "2023-10-16" @default.
- W2072465856 title "High-speed mapping of grown-in defects and their influence in large-area silicon photovoltaic devices" @default.
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- W2072465856 doi "https://doi.org/10.1016/s0022-0248(99)00708-3" @default.
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