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• W2072551465 abstract "Strain distributions within a silicon-on-insulator (SOI) layer induced by overlying compressively stressed Si3N4 features were measured using x-ray microbeam diffraction. A comparison of analytical and numerical mechanical models of the depth-averaged strain distributions to the measured strain profiles in the SOI layer indicated a blanket film stress of −2.5 GPa in the Si3N4 features. A two-dimensional boundary element model, implemented to analyze thin film/substrate systems, reproduced the observed strain distributions better than an edge-force formulation due to the incorporation of loading along the Si3N4/Si interface." @default.
• W2072551465 created "2016-06-24" @default.
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• W2072551465 date "2008-07-01" @default.
• W2072551465 modified "2023-09-26" @default.
• W2072551465 title "Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures" @default.
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• W2072551465 doi "https://doi.org/10.1063/1.2952044" @default.
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