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• W2072610059 abstract "Abstract We report on the preparation and properties of a-Si:H films and p-i-n devices produced using a remote-electron-cyclotron-resonance deposition at high temperature are electronic quality, with significantly improved stability compared to standard glow-discharge-deposited films. The bandgap and H content of the films depend critically upon which gas is used as the primary plasma gas. We have also made devices in these new materials, deposited on tin-oxide substrates, and they are also of good quality." @default.
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• W2072610059 date "1993-12-01" @default.
• W2072610059 modified "2023-09-27" @default.
• W2072610059 title "Fabrication of amorphous silicon materials and solar cells at high temperatures using ECR deposition techniques" @default.
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• W2072610059 doi "https://doi.org/10.1016/0022-3093(93)90494-i" @default.
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