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• W2072642337 abstract "CeN thin films were deposited at 573 K by reactive arc ion plating sustained by electron beam evaporation. Optical emission observation revealed that Ce vapor arc discharge in nitrogen atmosphere was very localized and the relative emission intensity of Ce+ to atomic Ce was proportional to the arc current, whereas nitrogen gas became less excited with the increasing arc current. The 111 orientation of CeN films was developed with the increasing arc current. CeN indicated p-type electrical conductivity and showed paramagnetic properties at 10 K. The carrier concentration in the films increased after exposure to the air, which suggested the existence of Ce4+ state in CeN film. The CeN film with a density of 7.82 g/cm3 showed higher hardness than single crystalline Si wafer." @default.
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• W2072642337 date "1998-12-01" @default.
• W2072642337 modified "2023-09-24" @default.
• W2072642337 title "Structure and properties of CeN thin films deposited in arc discharge" @default.
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• W2072642337 doi "https://doi.org/10.1016/s0042-207x(98)00276-0" @default.
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