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• W2072650116 endingPage "445701" @default.
• W2072650116 startingPage "445701" @default.
• W2072650116 abstract "Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere." @default.
• W2072650116 created "2016-06-24" @default.
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• W2072650116 date "2009-10-05" @default.
• W2072650116 modified "2023-10-08" @default.
• W2072650116 title "Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis" @default.
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• W2072650116 doi "https://doi.org/10.1088/0957-4484/20/44/445701" @default.
• W2072650116 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/19801771" @default.
• W2072650116 hasPublicationYear "2009" @default.
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