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• W2072994586 abstract "Self-assembled growth in combination with prepatterning yields ordered lines of Ge islands on a planar Si (001) surface. The self-assembled Ge nanostructures are grown on top of a 15-period Si/SiGe superlattice, which is deposited on a prepatterned Si substrate. The pattern consists of 10 nm deep trenches with a period of 250 nm. The superlattice translates the surface modulation of the substrate into a strain-field modulation at the growth front of the superlattice. This strain field modulation provides the template for the ordered nucleation of self-assembled Ge islands. Our method gives rise to the long-range ordering of perfectly passivated nanostructures and can in principle be applied to any other strained material system." @default.
• W2072994586 created "2016-06-24" @default.
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• W2072994586 date "2000-12-18" @default.
• W2072994586 modified "2023-09-23" @default.
• W2072994586 title "Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface" @default.
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• W2072994586 doi "https://doi.org/10.1063/1.1326842" @default.
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