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- W2073008658 abstract "The step-bunching dependence of the lifetime of metal–oxide–semiconductor capacitors on 4° off-axis 4H-SiC epitaxial wafers was investigated. The effects of the C/Si ratios in epitaxial growth and the substrate properties were examined. Step-bunching was observed at the base of triangle or trapezoid defects. Step-bunching decreased as the C/Si ratio was reduced. Time-dependent dielectric breakdown (TDDB) measurements showed that the locations of short lifetime breakdowns closely matched step-bunching positions. TDDB measurements of four different commercial substrates showed clear differences in capacitor lifetime." @default.
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- W2073008658 date "2014-02-01" @default.
- W2073008658 modified "2023-10-16" @default.
- W2073008658 title "Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4<sup>o</sup> Off-Axis Si-Face 4H-SiC Epitaxial Wafers" @default.
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- W2073008658 doi "https://doi.org/10.4028/www.scientific.net/msf.778-780.611" @default.
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