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• W2073034652 abstract "We have investigated the influence of deposition parameters on stress generation in CNx (0.3&lt;x&lt;0.5) thin films deposited onto Si(001) substrates by reactive magnetron sputtering of C in pure N2 discharges. Film stress, σ, which in all cases is compressive, decreases with an increase in the N2 pressure, PN2, due to structural changes induced by the pressure-dependent variation in the average energy of particles bombarding the film during deposition. The film stress σ is also a function of the film growth temperature, Ts, and exhibits a maximum value of ∼5 GPa at 350 °C. Under these conditions, the films have a distorted microstructure consisting of a three-dimensional, primarily sp2 bonded, network. In contrast, films deposited at Ts&lt;200 °C with a low stress are amorphous. At 350 °C&lt;Ts&lt;600 °C, σ gradually decreases as Ts is increased and the microstructure becomes more graphitic and contains fewer defects. Nanoindentation measurements show that the films grown at 350 °C exhibit the highest hardness and elasticity." @default.
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• W2073034652 date "1998-05-18" @default.
• W2073034652 modified "2023-09-23" @default.
• W2073034652 title "Stress development during deposition of CNx thin films" @default.
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• W2073034652 doi "https://doi.org/10.1063/1.121410" @default.
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