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- W2073095880 abstract "The current through 3-dimensionally-aligned epitaxial BaTiO3/perovskite-semiconductor heterostructures was measured down to fA by changing applied voltage and the ambient temperature. At low applied voltage, the leakage current through the BaTiO3/hole-conduction-type semiconductor was relaxation-dominated and symmetric with regard to bias polarity, while it exhibited an ohmic conduction in BaTiO3/electron-conduction-type semiconductor. The current exhibited reproducible memory effect at a high forward bias which was sufficiently low to preserve insulating property. Similar current–voltage characteristics were found using a nano-scale electrode. By regarding the BaTiO3 as a semiconductor, the transient process of the band bending at BaTiO3 surface explains the above observations." @default.
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- W2073095880 date "1998-06-01" @default.
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- W2073095880 title "Leakage current spectroscopy of epitaxial ferroelectric/semiconductor heterosructures and their memory effect" @default.
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- W2073095880 doi "https://doi.org/10.1016/s0169-4332(98)00138-x" @default.
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