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- W2073097188 abstract "We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-μm-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence." @default.
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- W2073097188 date "2002-06-10" @default.
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- W2073097188 title "Anti-domain-free GaP, grown in atomically flat (001) Si sub-μm-sized openings" @default.
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- W2073097188 doi "https://doi.org/10.1063/1.1485311" @default.
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