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• W2073100874 abstract "Zirconium oxide (ZrO2) films have been prepared by using ex situ thermal oxidation of sputtered Zr films on glass and silicon substrates. XRD patterns show that a highly monoclinic (111) preferential orientation of ZrO2 phase can be formed with increasing the oxidation temperature. According to XRD patterns in all thermal oxidized samples silicon oxide phase is present as interfacial layer at the Zr (ZrO2) / Si (glass) interface. In the case of silicon substrates, crystallite sizes obtained from ZrO2 peak with higher intensity reveal an increase with substrate temperature. AFM measurement shows on the whole a decrease of average surface roughness with oxidation temperature. The electrical property of the prepared films is investigated by means of four point probe measurement. An abrupt increase of sheet resistivity occurs when the crystallinity of ZrO2 phase enhances at higher temperature. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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• W2073100874 date "2011-06-29" @default.
• W2073100874 modified "2023-09-26" @default.
• W2073100874 title "The effect of oxidation temperature on the nano crystalline structure of ZrO2 films deposited on silicon and glass substrates" @default.
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• W2073100874 doi "https://doi.org/10.1002/crat.201100171" @default.
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