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- W2073106908 abstract "An electronic transport was observed in honeycomb-shaped mesoscopic (submicron) networks at liquid helium temperature. These networks were manufactured by the reactive ion etching of highly (nearly degenerated) and moderately doped n-GaAs epilayers through the initially structured, by self-organised patterning, polymer masks. The free electron transport was observed in the networks of thin, highly doped, n-GaAs epilayer. The detected multiple switching on theI–Vcharacteristics was explained in the framework of the model of a dynamic random resistor network. The existence of the patterned part of the thick, moderately doped, n-GaAs epilayer was the reason for the increase of the compensation ratio, the ionization energy and, as a result, the threshold voltage of the impact ionization of the shallow donor impurity level in the bulk of the epilayer." @default.
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- W2073106908 date "1999-01-01" @default.
- W2073106908 modified "2023-10-18" @default.
- W2073106908 title "Observation of transport in mesoscopic honeycomb-shaped networks" @default.
- W2073106908 doi "https://doi.org/10.1006/spmi.1998.0637" @default.
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