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• W2073168574 abstract "The nucleation and growth of Ge on Si(111) surfaces using solid phase epitaxy (SPE) have been investigated by scanning tunneling microscopy (STM). In order to clarify the growth mechanism of two-dimensional (2D) and three-dimensional (3D) Ge islands in SPE, 0.25-bilayer (BL)-thick and 3-BL-thick Ge films on Si surfaces were grown. In the case of the 2D-islanding process, initial amorphous Ge clusters formed into 2D-islands on Si surface. We observed that disordered structures on the island surface and the Si surface transformed into well-ordered surface reconstructed structures on both surfaces as annealing time increased. From these results and the dependence of the 2D-island density on the annealing temperature, we found that growth process of 2D-islands in SPE is similar to that in conventional molecular beam epitaxy (MBE). On the other hand, in case of the 3D-islanding process, crystalline 3D-islands and islands with irregular shapes were initially formed. The 3D-islands preferentially grow with the expense of the irregular island, which corresponds to the ripening process. Considering the results of STM observation, we discuss the origin of the activation energy which was obtained by annealing temperature dependence of the 3D-island density." @default.
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• W2073168574 date "2000-07-01" @default.
• W2073168574 modified "2023-09-26" @default.
• W2073168574 title "Nucleation and growth of Ge on Si(111) in solid phase epitaxy" @default.
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• W2073168574 doi "https://doi.org/10.1016/s0040-6090(00)00848-8" @default.
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