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- W2073202202 abstract "Photoresponse measurements on vapor-deposited Mo–Si systems in the range from 1.2 μ to 1.6 μ have been used to study the barrier height at the metal—semiconductor interface, and to obtain estimates of the hot carrier attenuation length in the metal and of the influence of semiconductor backscattering on the hot carrier collection efficiency. The metal films were formed by the chemical vapor deposition of molybdenum on silicon at 700°C, and some of the units were subsequently heat-treated at 850°C in an H2 atmosphere. Electron diffraction evidence indicates that the films are composed of polycrystalline molybdenum in the units not heated above 700°C. In units heated at 850°C, the metal layer consists of molybdenum and one or more molybdenum—silicon compounds in proportions which depend on the duration of heat treatment. The results indicate a barrier height of approximately 0.67 eV, and an attenuation length probably below 350 Å. The variation of the magnitude of the photoresponse with reverse bias voltage under conditions of fixed wavelength and optical intensity was also investigated. A comparison with similar measurements made on Au–Si diodes suggests that electron backscattering due to optical phonon generation may be of relatively small importance in the Mo–Si system." @default.
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- W2073202202 date "1967-02-01" @default.
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- W2073202202 title "Photoresponse Studies of Vapor‐Deposited Mo–Si Systems" @default.
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- W2073202202 doi "https://doi.org/10.1063/1.1709374" @default.
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