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- W2073289172 abstract "We report on the catalytic growth of multiwalled carbon nanotubes by plasma enhanced chemical vapor deposition using Ni and Co catalyst deposited on SiO 2 , Si 3 N 4 ,ITO and TiN X barrier layers; layers which are typically used as diffusive barriers of the catalyst material. Results revealed higher growth rates on conductive ITO and TiN X as compared to non con-ductiveSiO 2 , and Si 3 N 4 ,barriers. Micrograph images reveal the growth mechanism for nanotubes grown on SiO 2 , Si 3 N 4 and ITO to be tip growth while base growth was observed for the TiN X barrier layer. Initial conclusion suggests that conductive diffusion barrier surfaces promotes growth rates however it is possible that multiwalled carbon nanotubes grown onSiO 2 , and Si 3 N 4 ,were encumbered as a result of the formation of silicide as shown in the results here." @default.
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- W2073289172 date "2011-11-01" @default.
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- W2073289172 title "Multiwalled Carbon Nanotube Growth Mechanism on Conductive and Non-Conductive Barriers" @default.
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- W2073289172 doi "https://doi.org/10.4028/www.scientific.net/amr.403-408.1201" @default.
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