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• W2073408157 abstract "N-channel, fine-grain polycrystalline silicon thin-film transistors (poly-Si TFTs) with field-effect mobilities of 185 and 40 cm 2 /V·s are fabricated from sputter-deposited Si film irradiated with laser light. Carrier concentrations and Hall mobilities are derived from Hall effect measurements at room temperature. Carrier concentrations are similar, but there is a large difference in Hall mobility between the two poly-Si TFTs. Therefore, the increase of field-effect mobility depends on the increase of carrier velocity itself, not on the increase of carrier concentration. It is also found that Hall mobility depends more strongly on potential barrier height than does carrier concentration." @default.
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• W2073408157 date "1991-02-01" @default.
• W2073408157 modified "2023-09-25" @default.
• W2073408157 title "Hall Effect Measurements on Fine-Grain Poly-Si Thin-Film Transistors Made from Laser-Irradiated Sputter-Deposited Si Film" @default.
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• W2073408157 doi "https://doi.org/10.1143/jjap.30.l172" @default.
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