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- W2073431736 abstract "The ZnO films were deposited on GaN and with an interlayer of InGaN by atomic layer deposition. The orientation of the ZnO films was 〈0001〉 on InGaN, whereas it was 〈707¯4〉 (perpendicular to (101¯0) plane) on GaN. The lattice mismatch between ZnO and InGaN was about 0.3%, which is lower than that between ZnO and GaN (1.6%). With a lower lattice mismatch, the intensity of the near-band-edge emission increased about 120% and the full width at half maximum decreased 7.3 nm. Furthermore, ZnO/InGaN/GaN heterostructured light emitting diodes were fabricated. The electroluminescence spectra under forward bias showed a blue emission accompanied by a broad peak centered at 600 nm." @default.
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- W2073431736 date "2012-10-15" @default.
- W2073431736 modified "2023-10-17" @default.
- W2073431736 title "Improvement of optical performance of ZnO/GaN <i>p-n</i> junctions with an InGaN interlayer" @default.
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- W2073431736 doi "https://doi.org/10.1063/1.4760271" @default.
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