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- W2073609911 abstract "GaN layers are grown onto silicon (111) substrates by metalorganic chemical vapor phase deposition (MOCVD). The X-ray and photoluminescence spectra as well as the surface morphologies of the layers are comparable to the characteristics of GaN layers grown on sapphire substrates. Linewidths of 610 arcsec in the case of the GaN(0002) reflection in the X-ray ω-scan and 13 meV at 10 K for the dominant excitonic photoluminescence at 3.44 eV as well as a surface roughness below 2 nm (rms) are observed. The high quality has been achieved by a careful optimization of AlAs/AlN buffer layers on the Si substrates." @default.
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- W2073609911 date "1999-11-01" @default.
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- W2073609911 title "High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates" @default.
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- W2073609911 doi "https://doi.org/10.1002/(sici)1521-396x(199911)176:1<611::aid-pssa611>3.0.co;2-1" @default.
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