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- W2073643669 abstract "A new analyzing method for non-uniformly doped MOS capacitor C - t characteristics in lifetime evaluation has been developed. By analyzing the C - t characteristic in combination with the doping profile, which can be measured by the pulsed C - V method, the generation lifetime can be evaluated. The method is applied to a low-dose boron implanted MOS capacitor, and the generation lifetime can be evaluated as a function of depth." @default.
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- W2073643669 modified "2023-10-16" @default.
- W2073643669 title "A New Analyzing Method for Non-Uniformly Doped MOS Capacitor C-t Characteristics in Lifetime Evaluation" @default.
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- W2073643669 doi "https://doi.org/10.1143/jjap.20.l797" @default.
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