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• W2073679215 abstract "The forming process before resistive switching in Cu / SiO 2 / Pt memory devices, corresponding to the formation of conducting path, can be regarded as the dielectric soft breakdown. Based on the analysis of breakdown mechanism, a dynamic model combining the transition of Cu ions with the space-charge effect has been proposed, and demonstrates that the forming voltage depends on the thickness of oxide, the sweep rate of voltage and temperature. The predictions of the model are consistent with the experiment data reported in the literature and it is believed that the transition of Cu ions across the oxide and the accumulation of Cu ions at the SiO 2 / Pt interface could be responsible for the conductive path formation in Cu / SiO 2 / Pt memory devices." @default.
• W2073679215 created "2016-06-24" @default.
• W2073679215 creator A5055465202 @default.
• W2073679215 date "2013-09-20" @default.
• W2073679215 modified "2023-09-23" @default.
• W2073679215 title "MODELING FOR FORMATION OF CONDUCTING PATH IN Cu/SiO2/Pt MEMORY DEVICES: BASED ON SOFT BREAKDOWN MECHANISM" @default.
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• W2073679215 doi "https://doi.org/10.1142/s0217979213501609" @default.
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