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- W2073702951 abstract "An electron-beam technique for the determination of the minority-carrier lifetime distribution in semiconductors is described. Because of the short range of low-energy electrons, it is possible to profile the lifetime distribution in regions considerably less than 1 μ below the semiconductor surface with a depth resolution near the surface better than 0.1 μ. To demonstrate the method, the damage profile due to inert-gas ion implantation in silicon has been measured. The experimental results show that after room-temperature implantation without higher-temperature annealing, some defects have penetrated more than an additional 0.1 μ beyond their generation depth. A possible mechanism for this defect penetration, the diffusion of simple vacancies, is discussed." @default.
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- W2073702951 date "1979-06-01" @default.
- W2073702951 modified "2023-10-16" @default.
- W2073702951 title "Electron‐beam measurements of minority‐carrier lifetime distributions in ion‐beam‐damaged silicon" @default.
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- W2073702951 doi "https://doi.org/10.1063/1.326484" @default.
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