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• W2073736020 abstract "Mechanically flexible integrated circuits (ICs) have gained increasing attention in recent years with emerging markets in portable electronics. Although a number of thin-film-transistor (TFT) IC solutions have been reported, challenges still remain for the fabrication of inexpensive, high-performance flexible devices. We report a simple and straightforward solution: mechanically exfoliating a thin Si film containing ICs. Transistors and circuits can be prefabricated on bulk silicon wafer with the conventional complementary metal–oxide–semiconductor (CMOS) process flow without additional temperature or process limitations. The short channel MOSFETs exhibit similar electrical performance before and after exfoliation. This exfoliation process also provides a fast and economical approach to producing thinned silicon wafers, which is a key enabler for three-dimensional (3D) silicon integration based on Through Silicon Vias (TSVs)." @default.
• W2073736020 created "2016-06-24" @default.
• W2073736020 creator A5036061639 @default.
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• W2073736020 date "2012-10-30" @default.
• W2073736020 modified "2023-09-23" @default.
• W2073736020 title "High-Performance Flexible Thin-Film Transistors Exfoliated from Bulk Wafer" @default.
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• W2073736020 doi "https://doi.org/10.1021/nl302735f" @default.
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