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• W2073759890 abstract "We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface." @default.
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• W2073759890 date "2009-06-08" @default.
• W2073759890 modified "2023-10-16" @default.
• W2073759890 title "Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures" @default.
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• W2073759890 doi "https://doi.org/10.1063/1.3148670" @default.
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