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- W2073882119 abstract "Abstract Results on indium‐oxide‐based transparent oxide TFTs, which the active layer is prepared by DC sputtering, are presented. The fabricated TOS TFTs show high mobility (37 cm 2 /V‐s), high ON/OFF current ratio and large on‐state current. Fabricating oxide TFTs on temperature‐sensitive substrates is also attainable owing to the low temperature process of the active layer preparation." @default.
- W2073882119 created "2016-06-24" @default.
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- W2073882119 date "2009-06-01" @default.
- W2073882119 modified "2023-10-16" @default.
- W2073882119 title "15.4: Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by DC Sputtering" @default.
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- W2073882119 doi "https://doi.org/10.1889/1.3256729" @default.
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