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- W2073910473 abstract "Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs (HJFETs) were successfully fabricated by using a highly-selective wet recess etching technique. The fabricated HJFET exhibited a maximum drain current of 202 mA/mm, a peak transconductance of 330 mS/mm and a gate-drain breakdown voltage of 33 V. Standard deviation of the threshold voltage was 60 mV, which is less than one fifth that of the conventional AlGaAs/InGaAs HJFET. No appreciable frequency dispersion in the drain current was measured, indicating that the developed InGaP/AlGaAs/InGaAs HJFET with a buried gate structure is promising for large-signal microwave power applications." @default.
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- W2073910473 date "1995-12-07" @default.
- W2073910473 modified "2023-10-17" @default.
- W2073910473 title "Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs fabricated by selective wet etching" @default.
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- W2073910473 doi "https://doi.org/10.1049/el:19951474" @default.
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