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- W2073914110 abstract "A detailed study of the low frequency noise in Si MOS devices from a 0.35 μm CMOS technology is presented. The normalized drain current noise WLSId/Id2 has been systematically investigated at a fixed frequency and constant normalized drain current. In large area devices (>5–7μm2), the noise is typically 1/f-like, whereas, in small area devices (≤1μm2), the noise stems from the contribution of one or several RTS components. In large area devices, the 1/f noise can easily be interpreted by a classical carrier number fluctuation model. A multi-RTS component scheme has to be employed in the case of small area devices." @default.
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- W2073914110 date "1993-08-01" @default.
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- W2073914110 title "Low frequency noise and random telegraph signals in 0.35μm silicon CMOS devices" @default.
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- W2073914110 doi "https://doi.org/10.1016/0167-9317(93)90152-u" @default.
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