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- W2073929646 abstract "( Ba 0.5 Sr 0.5 )TiO 3 (BST) thin films have been prepared on Pt/SiO 2 /Si substrates under various Ar/O 2 plasma conditions by the conventional rf magnetron sputtering method using a ceramic target containing excess BaO and SrO. With increasing deposition temperature, the crystallinity of the BST films abruptly increased and change of the preferred orientation was observed. At 650° C, (100)-preferred orientation was obtained. The increase of the crystallinity of films improved the dielectric constant. A 100 nm BST thin film deposited at 650° C with 50% O 2 plasma content has a dielectric constant of 725 and a leakage current density of 2.3×10 -7 A/cm 2 at 2.5 V. In the current-voltage curve of BST film deposited at higher substrate temperature, lower leakage current density in the low bias region and narrower flat region (hopping conduction region) were obtained." @default.
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- W2073929646 date "1995-01-01" @default.
- W2073929646 modified "2023-10-17" @default.
- W2073929646 title "Electrical Properties and Crystal Structure of (Ba<sub>0.5</sub>Sr<sub>0.5</sub>)TiO<sub>3</sub> Thin Films Prepared on Pt/SiO<sub>2</sub>/Si by RF Magnetron Sputtering" @default.
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- W2073929646 doi "https://doi.org/10.1143/jjap.34.196" @default.
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