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- W2073980468 abstract "We consider a memory device that is printed by double patterning (litho-etch-litho-etch) technology wherein positiveimages of 1/4-pitch lines are printed in each patterning step. We analyze the errors that affect the width of the spaces.We propose a graphical method of visualizing the many-dimensional process-window for double patterning. Controllingthe space-width to ±10% of half-pitch is not possible under the worst combination of errors. Statistical analysis showsthat overlay and etch bias are the most significant contributors to the variability of spaces. 3σ[space-width] = 17% and11% of nominal space can be achieved for 3σ[Overlay] = 6 nm and 3 nm, respectively, for a 40-nm half pitch arrayprinted using NA=0.93." @default.
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- W2073980468 date "2007-05-03" @default.
- W2073980468 modified "2023-09-25" @default.
- W2073980468 title "Double patterning technology: process-window analysis in a many-dimensional space" @default.
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- W2073980468 doi "https://doi.org/10.1117/12.729011" @default.
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