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- W2073990788 abstract "Resistance and Hall effect in vanadium-doped and bulk grown n-InP are measured at room temperature as a function of hydrostatic pressure up to 50 × 108 and 15 × 108 Pa using the Bridgman opposed anvil system and cylinder and piston assembly, respectively. The photoconductivity response from the sample in the Bridgman ring is used to measure precisely the pressure and the results show that the Γ conduction band minimum moves away from the valence band with an energy coefficient of (8.2 ± 0.2) meV/108 Pa. An increase in resistance by about four orders of magnitude is indicative of an electron trap due to vanadium as this is pushed into the band gap with pressure. At atmospheric pressure, its energy is estimated to be (0.16 ± 0.04) eV above the Γ minimum. This is the first measurement of the V level in InP reported so far. Vanadium and other 3d-transition metal impurities in GaAs, InP, GaAlAs, GaAsP, and GaInAsP seem to conform to the vacuum linked model of Ledebo and Ridley." @default.
- W2073990788 created "2016-06-24" @default.
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- W2073990788 date "1993-04-16" @default.
- W2073990788 modified "2023-09-28" @default.
- W2073990788 title "Electrical Properties of Indium Phosphide under Pressure" @default.
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- W2073990788 doi "https://doi.org/10.1002/pssa.2211360225" @default.
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