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• W2073999637 abstract "The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate." @default.
• W2073999637 created "2016-06-24" @default.
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• W2073999637 date "2013-07-22" @default.
• W2073999637 modified "2023-10-02" @default.
• W2073999637 title "Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements" @default.
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• W2073999637 doi "https://doi.org/10.1063/1.4816424" @default.
• W2073999637 hasPublicationYear "2013" @default.
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