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• W2074024546 abstract "We investigated the structural properties of 2-μm thick Si0.58Ge0.42 thin films grown on a combined set of Si1−xGex stepwise buffer layers and a Si0.51Ge0.49 strain-inverted layer on Si substrates. Raman spectroscopy and Rutherford backscattering measurements showed smaller residual strain and superior crystalline lattice ordering compared to a sample without any buffer layer. Furthermore, a Si0.58Ge0.42 thin film with a low dislocation density of less than 105 cm−2 and a smooth surface roughness of 0.903 nm can be achieved by using a combined set of Si1−xGex stepwise buffer layers and a Si0.51Ge0.49 strain-inverted layer, because most dislocations can be confined within each Si1−xGex buffer layer." @default.
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• W2074024546 date "2013-09-01" @default.
• W2074024546 modified "2023-09-23" @default.
• W2074024546 title "Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layers" @default.
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• W2074024546 doi "https://doi.org/10.1016/j.jcrysgro.2012.12.059" @default.
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