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• W2074134002 abstract "Abstract This paper reviews the reliability of III–V based heterojunction bipolar transistors (HBTs). These devices have many potential advantages over other solid-state microwave devices. However, because of the tradeoff between performance and reliability, they are not being used to any great extent in power microwave applications. In the type of III–V HBT device most fully developed, the AlGaAs/GaAs HBT, leakage currents play a major role in the dominant mode of degradation. Because low-frequency noise is related to these leakage currents it has been used extensively in the analysis of the performance and reliability limitations of these devices. The reliability of other types of III–V HBT devices, such as InGaP/GaAs and InP based devices, is also discussed." @default.
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• W2074134002 date "1998-02-01" @default.
• W2074134002 modified "2023-10-17" @default.
• W2074134002 title "Reliability of III–V based heterojunction bipolar transistors" @default.
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• W2074134002 doi "https://doi.org/10.1016/s0026-2714(97)00070-x" @default.
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