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• W2074255830 abstract "Abstract We report on high mobility ZnO thin film transistors (TFTs) ( 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) composite gate insulator on a glass substrate. 30 mol% MgO added BZN composite gate insulators exhibited greatly enhanced leakage current characteristics (~ − 8  A/cm 2 at 0.3 MV/cm) due to the high breakdown strength of MgO, while retaining an appropriate high- k dielectric constant of 32. The ZnO-TFTs with MgO–BZN composite gate insulators showed a high field-effect mobility of 37.2 cm 2 /Vs, a reasonable on–off ratio of 1.54 × 10 5 , a subthreshold swing of 460 mV/dec, and a low threshold voltage of 1.7 V." @default.
• W2074255830 created "2016-06-24" @default.
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• W2074255830 date "2010-03-01" @default.
• W2074255830 modified "2023-10-17" @default.
• W2074255830 title "Zinc oxide thin film transistors using MgO–Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate" @default.
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• W2074255830 doi "https://doi.org/10.1016/j.tsf.2009.09.001" @default.
• W2074255830 hasPublicationYear "2010" @default.
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