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- W2074272832 abstract "Surface quality of nanostructures has a significant influence on related device performance. In this study, a large number of dangling bonds are detected on the silicon nanocrystal (Si NC) surface after surface modification. These dangling bonds work as carrier traps and degrade particle electrical properties. Therefore, controlled particle oxidization is proposed as a substitution method for surface passivation, which can reduce carrier traps easily and effectively. Electron mobility is improved dramatically after a 12-hour controlled oxidation, and as a result, Si NC/PTB7 hybrid solar cells (HSC) achieves an efficiency of 3.6%; this is more than twice the efficiency of devices fabricated with fresh Si NCs (without passivation), and the highest efficiency for Si NC-based HSCs reported to date. However, excessive oxidation should be avoided because it introduces an oxygen rich layer on the particle surface, which blocks carrier transport and deteriorates electrical properties inversely." @default.
- W2074272832 created "2016-06-24" @default.
- W2074272832 creator A5036165928 @default.
- W2074272832 creator A5053549168 @default.
- W2074272832 creator A5058463169 @default.
- W2074272832 creator A5071239083 @default.
- W2074272832 creator A5083954268 @default.
- W2074272832 date "2014-11-01" @default.
- W2074272832 modified "2023-09-26" @default.
- W2074272832 title "Oxygen passivation of silicon nanocrystals: Influences on trap states, electron mobility, and hybrid solar cell performance" @default.
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- W2074272832 doi "https://doi.org/10.1016/j.nanoen.2014.09.031" @default.
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