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- W2074361569 abstract "Ni/AuBe as p-type ohmic contact to p-GaN in the heat treatment process are reported. By selection of an optimum condition, the best construction of Ni/AuBe bi-layers is 5 nm/5 nm thick. The light-transmission is about 75% for 470 nm blue light and the lowest specific contact resistance obtained is 2 × 10−3 Ω cm2 examined by transmission line model after heat treatment process at 500 °C alloying temperature during 10 min in nitrogen ambient. The Be atom may plays an important role in the formation of good ohmic contacts. On the other hand, Ni/AuBe bi-layers are also applied to GaN-based light-emitting diodes (LEDs) as p-type ohmic contact electrode. The typical I–V characteristics of the GaN-based LEDs with 5 nm/5 nm-thick Ni/AuBe TCL exhibit a forward-bias voltage of 3.41 V at injection current of 20 mA." @default.
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- W2074361569 date "2003-10-01" @default.
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- W2074361569 title "GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer" @default.
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- W2074361569 doi "https://doi.org/10.1016/s0038-1101(03)00129-1" @default.
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