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- W2074423960 abstract "The quenching phenomenon in Mott-type hopping conduction below 125 K has been observed in As+-ion-implanted semi-insulating GaAs. The crystallinity of the implanted layer was evaluated using Rutherford backscattering and Raman scattering methods. The hopping conduction was observed in the as-implanted and annealed samples. The as-implanted layer was amorphous, while the annealed layers remained crystalline, consisting of a disordered structure with a displacement fraction of ∼1021 cm−3. In the samples annealed at 500 °C, it is suggested that some of the As precipitates are located on Ga sites, leading to the disappearance of the A1 g Raman active mode of the As clusters. The hopping conduction was photoquenched as the defect concentration reached ∼6×1017 cm−3, indicating the regrowth of the AsGa antisite defects as a main component of EL2." @default.
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- W2074423960 date "1996-10-15" @default.
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- W2074423960 title "Regrowth of the photoquenchable defect relating to the hopping conduction in arsenic-ion-implanted semi-insulating GaAs" @default.
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- W2074423960 doi "https://doi.org/10.1063/1.363423" @default.
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