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• W2074476307 endingPage "6708" @default.
• W2074476307 startingPage "6708" @default.
• W2074476307 abstract "The effects of an Al underlayer with respect to texture control and electromigration (EM) resistance of Cu films are investigated in this study. The Al underlayer enhances the (111) texture of Cu films and the surface smoothness of the annealed Cu film. The same cubic crystal structure (face-centered cubic) and small difference of the nearest interatomic distance of the (111) plane between Cu and Al result in the increase of the peak ratio I (111) / I (200) of Cu films. The thicker the Al film, the more preferred the Cu (111) orientation. The resistivity of the Cu/Al bilayer film, which increases at about 0.2 µΩ·cm per 1-nm-thick Al underlayer, is smaller than the reported value of single phase Cu(Al) solution. The EM resistance of Cu interconnects is also improved when the Al underlayer is present. The mean time to failure (MTF) of Cu interconnects with a 5-nm-thick Al underlayer is longer by one order of magnitude than that without an Al underlayer at 240°C and 12 MA/cm 2 ." @default.
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• W2074476307 date "2000-12-01" @default.
• W2074476307 modified "2023-09-24" @default.
• W2074476307 title "Effect of Aluminum Seed Layer on the Crystallographic Texture and Electromigration Resistance of Physical Vapor Deposited Copper Interconnect" @default.
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• W2074476307 doi "https://doi.org/10.1143/jjap.39.6708" @default.
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