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- W2074562249 abstract "A comparative investigation is performed on the effects of vacancies induced by rapid thermal processing on oxygen precipitation behavior in heavily arsenic- and antimony-doped Czochralski silicon wafers. It is experimentally found that vacancy-assisted oxide precipitate nucleation occurs at 800, 900, and 1000 °C in the Sb-doped wafers, while it only occurs at 800 °C in the As-doped ones. Density functional theory calculations indicate that it is energetically favorable to form AsVO and SbVO complexes in As- and Sb-doped silicon crystals, respectively. These complexes might act as precursors for oxide precipitate nucleation under appropriate conditions. The difference between the effects of rapid thermal processing -induced vacancies on oxide precipitate nucleation in the heavily As- and Sb-doped Cz silicon crystals is tentatively elucidated based on density functional theory calculations revealing the difference in binding energies of AsVO and SbVO complexes." @default.
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- W2074562249 date "2013-04-28" @default.
- W2074562249 modified "2023-10-13" @default.
- W2074562249 title "Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon" @default.
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- W2074562249 doi "https://doi.org/10.1063/1.4803061" @default.
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