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• W2074625851 abstract "MEH-PPV (poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene]) based Schottky diodes have been fabricated and investigated through the analyses of current density–voltage and capacitance–voltage characteristics. Temperature-dependent hole mobility of MEH-PPV is extracted by the space-charge limited conduction (SCLC) model from 300 to 400 K, and the use of the SCLC model is examined in high electric field. The highest measured hole mobility is 0.013 cm2/Vs at 353 K. The thickness of MEH-PPV in the structures consisting of ITO/MEH-PPV/Al, largely affects the performance of the diodes, and the thinner film displays better device performance. According to capacitance–voltage relations, the effective carrier density and Schottky barrier height of MEH-PPV have been determined to be 2.24 × 1017 cm−3 and 0.64 eV, respectively." @default.
• W2074625851 created "2016-06-24" @default.
• W2074625851 creator A5034231874 @default.
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• W2074625851 date "2004-09-01" @default.
• W2074625851 modified "2023-09-26" @default.
• W2074625851 title "Experimental and theoretical investigation of MEH-ppv based Schottky diodes" @default.
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• W2074625851 doi "https://doi.org/10.1016/j.mee.2004.05.011" @default.
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