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- W2074643257 abstract "In x Ga 1 − x N films with 0.4≤x≤1 are analyzed using electrolyte-based capacitance-voltage technique. In-rich InxGa1−xN for x>0.4 samples exhibit a strong surface electron accumulation. At x=0.4, the Fermi level at the surface is pinned to the conduction band edge indicating a crossover from surface accumulation to depletion. The measured Mott–Schottky plots are fitted using a model based on a Schrödinger–Poisson solver. By comparing the measured data to the fitting results, we conclude that a subsurface layer of ∼15 nm thickness with remarkably lower donor defect concentration is formed during the growth of InGaN films." @default.
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- W2074643257 date "2010-02-22" @default.
- W2074643257 modified "2023-09-24" @default.
- W2074643257 title "Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling" @default.
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