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• W2074661650 abstract "The initial stage of the growth of GaS on GaAs(111)A has been studied by Auger electron spectroscopy (AES), low-energy electron-loss spectroscopy (LEELS) and X-ray photoemission spectroscopy (XPS) as a function of deposition and annealing temperatures. The thermal evaporation of GaS single crystal is used for the deposition. The LEELS spectrum of the films with thickness of about 20Ågrown at 400°C resembles that of GaS single crystal, while there are some missing loss peaks in the films grown at 350°C due to the poor crystal quality. LEELS and XPS spectra suggest that the crystal quality of films grown at 350 and 400°C is improved by the post annealing at 450°C." @default.
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• W2074661650 date "1998-01-01" @default.
• W2074661650 modified "2023-10-16" @default.
• W2074661650 title "Initial stage of the growth of GaS thin films on GaAs" @default.
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• W2074661650 doi "https://doi.org/10.1016/s0169-4332(97)00535-7" @default.
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