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- W2074687538 abstract "Abstract Anomalous Au locations in SiO 2 /Si system of Au‐contaminated and thermally oxidized n‐type Si(001) have been investigated using XPS and alternating current surface photovoltage (AC SPV) techniques. On the basis of XPS analyses, in Au‐contaminated (2 × 10 15 atoms/cm 2 ) and thermally oxidized Si surfaces between 823 and 973 K, the Au existed both on the top of the SiO 2 and the SiO 2 /Si interface as a cluster that did not make bonds with other elements such as O and H. The resulting Au/n‐type Si Schottky barrier causes an occurrence of frequency‐dependent AC SPV, demonstrating that the Si surface was depleted and/or weakly inverted. This result indicates that the Au/n‐type Si Schottky barrier (calculated to be 0.70 eV) survived at the SiO 2 /Si interface even after the thermal oxidation. As the temperature increased higher than 1023 K, the Au at the SiO 2 /Si interface diffused into bulk Si, resulting in drastic reduction of AC SPV. On oxidation kinetics between 1023 and 1173 K, Au is thought to act as a catalyst and to promote the SiO 2 growth at the Si surface, resulting in enhanced oxidation. Copyright © 2008 John Wiley & Sons, Ltd." @default.
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- W2074687538 date "2008-01-07" @default.
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- W2074687538 title "Au/N‐type Si Schottky‐barrier contact and oxidation kinetics in Au‐contaminated and thermally oxidized N‐type Si (001) surfaces" @default.
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- W2074687538 doi "https://doi.org/10.1002/sia.2629" @default.
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