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• W2074715731 abstract "A recombination active defect is found in as-grown high-purity floating zone n-type silicon wafers containing grown-in nitrogen. In order to identify the properties of the defect, injection-dependent minority carrier lifetime measurements, secondary ion mass spectroscopy measurements, and photoluminescence lifetime imaging are performed. The lateral recombination center distribution varies greatly in a radially symmetric way, while the nitrogen concentration remains constant. The defect is shown to be deactivated through high temperature annealing and hydrogenation. We suggest that a nitrogen-intrinsic point defect complex may be responsible for the observed recombination." @default.
• W2074715731 created "2016-06-24" @default.
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• W2074715731 date "2015-03-01" @default.
• W2074715731 modified "2023-10-01" @default.
• W2074715731 title "Influence of Annealing and Bulk Hydrogenation on Lifetime-Limiting Defects in Nitrogen-Doped Floating Zone Silicon" @default.
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• W2074715731 doi "https://doi.org/10.1109/jphotov.2014.2367912" @default.
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