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• W2074778353 abstract "Abstract The influence of the growth conditions of multilayer CdTe/ZnTe quantum dots (QDs) on Si substrate upon their carrier dynamics is studied using intensity integration and broadening photoluminescence. The unusual temperature dependence of the line broadening is explained using a model for interband transitions that involves a lowest discrete electronic state (1S e ) with different discrete hole states (1S 3/2 and 2S 3/2 ) and a 1P transition. These transitions are expected to play a critical role in both the thermally activated energy and the line broadening of the QDs. We also demonstrate that a thermally activated transition between two different states occurs with band low-temperature quenching, with values separated by 5.8–16 meV. The main nonradiative process is thermal escape assisted by carrier scattering via emission of longitudinal phonons through the hole states at high temperature, with an average energy of 19.3–20.2 meV." @default.
• W2074778353 created "2016-06-24" @default.
• W2074778353 creator A5036252071 @default.
• W2074778353 creator A5054615980 @default.
• W2074778353 date "2015-02-05" @default.
• W2074778353 modified "2023-10-03" @default.
• W2074778353 title "Discrete states and carrier-phonon scattering in quantum dot population dynamics" @default.
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• W2074778353 doi "https://doi.org/10.1038/srep08267" @default.
• W2074778353 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/4317687" @default.
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• W2074778353 hasPublicationYear "2015" @default.
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