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- W2074810511 abstract "An experimental study of the current gain obtained in GaAs/Al/sub x/Ga/sub 1-x/As p-n-p heterojunction bipolar transistors fabricated from organometallic vapor-phase-epitaxial (OMVPE) material is reported. The structures studied included an abrupt base-emitter junction without a base spacer layer and two other structures with a 100-AA undoped base spacer layer with either an abrupt or a linearly graded base emitter junction. Analysis of current gain in these devices indicates that surface recombination dominates the base current and that an undoped base spacer layer is not needed.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2074810511 date "1988-01-01" @default.
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- W2074810511 title "DC performance of GaAs/Al/sub x/Ga/sub 1-x/As p-n-p heterojunction bipolar transistors grown by OMVPE" @default.
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- W2074810511 doi "https://doi.org/10.1109/16.2566" @default.
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