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• W2074864560 abstract "The morphology of para-hexaphenyl (PHP) grown on GaAs(001) by molecular beam epitaxy has been studied using atomic force microscopy (AFM). For elevated substrate temperatures between 90 and 170°C and a deposition rate of 0.7 Å s−1, it was found that hexaphenyl on GaAs(001)-2×4 forms well-defined, three-dimensional islands of a rectangular shape oriented in 〈100〉. Their constant width indicates that PHP is epitaxially grown as a coherently strained organic material. The island density shows the Arrhenius behavior resulting in activation barrier of (0.90±0.04) eV. The normalized island size distributions closely resemble that of a critical island size of one. On the basis of the AFM measurements, X-ray diffraction data, and geometrical considerations, we developed a structural model for PHP grown on GaAs(001)." @default.
• W2074864560 created "2016-06-24" @default.
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• W2074864560 date "1998-11-01" @default.
• W2074864560 modified "2023-09-30" @default.
• W2074864560 title "MBE growth of para-hexaphenyl on GaAs(001)-2×4" @default.
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• W2074864560 doi "https://doi.org/10.1016/s0039-6028(98)00720-1" @default.
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