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• W2074874077 abstract "We report a thermally resistant and air-stable n-type semiconductor based on our study of naphthalene diimide (NTCDI) derivatives (N1, N2, and N3) with various numbers of electron-withdrawing CF3 groups. The device using N3, which contains aromatic NTCDI, was found to exhibit an electron mobility (μe) of 0.15 (±0.04) cm2/V s (the maximum μe observed was 0.24 cm2/V s) and an Ion/Ioff (at Vd = 80 V) of approximately 2 × 105. Moreover, the N3 device exhibits excellent air stability, even when exposed to the open air for 42 days, and significantly better thermal resistance than the previously reported benzylic imide derivative R1." @default.
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• W2074874077 date "2009-10-01" @default.
• W2074874077 modified "2023-10-16" @default.
• W2074874077 title "A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline" @default.
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• W2074874077 doi "https://doi.org/10.1016/j.synthmet.2009.08.004" @default.
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