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- W2074944984 abstract "Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga+ ions with fluences of 1 × 1016–1.5 × 1017 cm−2 followed by post-annealing treatment at 750 °C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga+-implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the InxGa1−xP phase is formed at a critical fluence of 7 × 1016 cm−2. The newly grown phase was identified with the appearance of Ga rich TOInP and In rich TOGaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification." @default.
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- W2074944984 date "2011-02-01" @default.
- W2074944984 modified "2023-10-16" @default.
- W2074944984 title "Optical properties of InxGa1−xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam" @default.
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- W2074944984 doi "https://doi.org/10.1016/j.nimb.2010.11.083" @default.
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